Ksp13 transistor datasheet npn

KSP13/14 Rev. A2, September 2002 Typical Characteristics Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 3. Base-Emitter On Voltage Figure 4. Current Gain Bandwidth Product 1 10 100 1000 1k 10k 100k 1M VCE = 5V h FE, DC CURRENT GAIN IC [mA], COLLECTOR CURRENT 10 100 0.1 1 10 IC = 1000 IB VCE(sat) VBE(sat) V BE

Image is for illustrative purpose only ... ... Apr 28, 2019 · KSP13 Transistor Datasheet pdf, KSP13 Equivalent. Parameters and Characteristics. KSP13 datasheet, KSP13 pdf, KSP13 data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Epitaxial Silicon Darlington Transistor. KSP13 NPN Epitaxial Silicon Darlington Transistor. Absolute Maximum Ratings Ta=25°C unless otherwise noted.

KSP14 datasheet, cross reference, ... KSP14TA Bipolar (BJT) Transistor NPN - Darlington 30V 500mA 125MHz 625mW Through Hole TO-92-3 - Bulk (Alt: KSP14TA) Product data sheet Rev. 1 — 13 January 2014 2 of 22 NXP Semiconductors BFU550A NPN wideband silicon RF transistor [1] Tsp is the temperature at the solder point of the collector lead. [2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) =MSG. 2. Pinning information Table 2. Discrete pinning 3. Ordering information Table 3.

SILICON NPN TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications.