•Datasheet: 0150SC-1250M Silicon Carbide Static Induction Transistor •Datasheet: 0405SC-1000M Silicon Carbide Static Induction Transistor. Microsemi Corporation recently announced its first two RF power transistors utilizing silicon carbide technology for high power VHF and UHF band pulsed radar applications.
Much as the IGBT was revolutionary in the 1980s, today the wide band gap semiconductor material, silicon carbide (SiC), shows increasing promise for revolutionizing the power electronics world once again. The IGBT gave us a transistor capable of high blocking voltages and low on-state (i.e., conduction) losses all contained in a single, well-
Nov 25, 2019 · A graph showing the relationship between band gap and temperature for various phases of Silicon Carbide. Traditionally, electric vehicles have relied on silicon power transistors in their ...